| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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The IRL2703S is a logic-level N-Channel Power MOSFET from Infineon Technologies (originally International Rectifier). It features a drain-source breakdown voltage of 30V, continuous drain current of 24A at 25°C case temperature, and a maximum on-resistance of 40mΩ at Vgs=10V and 60mΩ at Vgs=4.5V.
Key electrical characteristics include a gate threshold voltage of 1V, input capacitance of 450pF at Vds=25V, and total gate charge of 15nC at Vgs=4.5V. The device offers fast switching with typical turn-on delay of 8.5ns, rise time of 140ns, and turn-off delay of 12ns. It is fully avalanche rated with single pulse avalanche energy of 77mJ.
The IRL2703S is housed in a D2PAK (TO-263) surface mount package, which provides low internal connection resistance and high power dissipation capability up to 45W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C, with junction-to-case thermal resistance of 3.3°C/W.
Designed for high current applications, this MOSFET leverages advanced HEXFET technology to achieve low on-resistance per silicon area. The logic-level gate drive allows direct control from low-voltage logic circuits, making it suitable for efficient power management designs.
30V.
D2PAK (TO-263) surface mount package.
-55°C to 175°C junction temperature.
The device is listed as RoHS3 compliant, but this information is unverified.
1V at Id=250µA.
24A at Tc=25°C, 17A at Tc=100°C.
40mΩ maximum at Vgs=10V, Id=14A.