IRL2505PBF N-Channel MOSFET from Infineon Technologies with 55V drain-source voltage, 104A continuous drain current, and 8mOhm on-resistance. Housed in a TO-220AB through-hole package.
Mfr Part #:

IRL2505PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 55V drain-source voltage, 104A continuous drain current, and 8mOhm on-resistance. Housed in a TO-220AB through-hole package.
✓ Total Stock: 3,500 pcs
$ Price Range: $1.12

IRL2505PBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,500 pcs
3500 pcs On Request 1 On Request On Request On Request On Request On Request

IRL2505PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRL2505PBF Description

Short technical summary and product information.

The IRL2505PBF is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for high-current switching applications and features a maximum drain-source voltage of 55V and a continuous drain current of 104A at case temperature. The device offers a low drain-source on-resistance of 8 milliohms maximum when driven at 10V gate voltage with 54A drain current.

 

Electrical characteristics include a maximum gate threshold voltage of 2V at 250µA drain current, a gate charge of 130 nC at 5V gate voltage, and input capacitance of 5000 pF at 25V drain-source voltage. The device can dissipate up to 200W of power at case temperature and operates over a junction temperature range of -55°C to 175°C. The recommended gate drive voltages for achieving minimum on-resistance are 4V and 10V.

 

The IRL2505PBF is supplied in a TO-220-3 through-hole package with a supplier device package of TO-220AB. This package allows for efficient heat sinking and is suitable for power circuitry in industrial and consumer applications. The device is RoHS compliant (unverified) and rated MSL 1 (unlimited).

IRL2505PBF Quick Information

Product Type: MOSFET
Canonical Name: Infineon IRL2505PBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRL2505PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRL2505PBF Estimated Pricing

Qty Low High
1,000+ $1.12 $1.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL2505PBF Features

  • N-Channel MOSFET rated for 55V drain-source.
  • Continuous drain current up to 104A.
  • Low on-resistance of 8 milliohms.
  • Gate threshold voltage 2V maximum.
  • Operating temperature range -55°C to 175°C.

IRL2505PBF Applications

  • Ideal for high-current switching applications.
  • Used in DC-DC converters and power supplies.
  • Suitable for motor control circuits.
  • Applicable in battery management systems.

IRL2505PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRL2505PBF?

The maximum drain-source voltage is 55V.

What is the continuous drain current rating?

The continuous drain current is 104A at case temperature.

What is the on-resistance?

The maximum drain-source on-resistance is 8 milliohms at 54A drain current and 10V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the package type?

The device is housed in a TO-220-3 through-hole package, also known as TO-220AB.

Is the IRL2505PBF RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this status is unverified.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2V at 250µA drain current.

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