| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,400 pcs
|
6400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRL2203NSTRLPBF is an N-Channel Power MOSFET from Infineon Technologies, part of the advanced HEXFET family. It is designed for high-efficiency power switching applications requiring low on-resistance and high current capability.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, continuous drain current of 116A at 25°C (82A at 100°C), and a maximum pulsed drain current of 400A. The drain-to-source on-resistance is typically 7.0 mΩ at Vgs=10V, Id=60A, and 10 mΩ at Vgs=4.5V, Id=48A. The device can dissipate up to 180W at case temperature 25°C.
The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for high-current PCB layouts. It supports an operating junction temperature range of -55°C to +175°C and is rated for repetitive avalanche energy up to 18 mJ. The part is lead-free (PbF suffix) and RoHS compliant.
The continuous drain current is 116A at Tc=25°C and 82A at Tc=100°C. Pulsed drain current can reach 400A.
The maximum drain-to-source on-resistance is 7.0 mΩ at Vgs=10V, Id=60A, and 10 mΩ at Vgs=4.5V, Id=48A.
It comes in a D2PAK (TO-263-3) surface-mount package.
The operating junction temperature range is -55°C to +175°C.
Yes, the part is lead-free (PbF suffix) and RoHS compliant per the datasheet.