| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,338 pcs
|
2338 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
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| Power Dissipation |
The IRL2203N from Vishay Dale is an N-channel HEXFET Power MOSFET designed for efficiency and reliability. It features advanced processing for extremely low on-resistance per silicon area, combined with fast switching speeds.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of 30V and a low on-resistance of 7.0mΩ at a gate-source voltage of 10V and drain current of 60A. The continuous drain current is rated at 116A at 25°C case temperature and 82A at 100°C case temperature. The device supports a continuous power dissipation of 180W at 25°C.
This MOSFET operates over a junction temperature range of -55°C to +175°C. It is housed in the universally preferred TO-220AB package, which is suitable for commercial-industrial applications up to 50 watts of power dissipation due to its low thermal resistance and cost-effectiveness.
The IRL2203N is fully avalanche rated and offers dynamic dv/dt rating, making it suitable for a wide variety of applications requiring efficient power switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current for the IRL2203N is 116A at a case temperature of 25°C and 82A at 100°C.
The on-resistance of the IRL2203N is a maximum of 7.0mΩ at VGS = 10V and ID = 60A, or 10mΩ at VGS = 4.5V and ID = 48A.
The operating junction and storage temperature range for the IRL2203N is -55°C to +175°C.
The IRL2203N is supplied in the TO-220AB package.
The RoHS status of the IRL2203N is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRL2203N is 1.
The REACH status for the IRL2203N is REACH Unaffected.