IRL1104PBF N-Channel MOSFET, 40V drain-source voltage, 104A continuous drain current at 25°C, 8mΩ on-resistance at 10V. TO-220AB through-hole package.
Mfr Part #:

IRL1104PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 40V drain-source voltage, 104A continuous drain current at 25°C, 8mΩ on-resistance at 10V. TO-220AB through-hole package.
✓ Total Stock: 1,045 pcs

IRL1104PBF Available from 1 distributor

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1,045 pcs
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IRL1104PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRL1104PBF Description

Short technical summary and product information.

The IRL1104PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a drain-source breakdown voltage of 40V and a continuous drain current of 104A at 25°C (74A at 100°C). The device offers ultra-low on-resistance of 8mΩ at 10V gate drive (12mΩ at 4.5V), enabling minimal conduction losses.

 

This MOSFET utilizes advanced HEXFET technology, providing fast switching, dynamic dv/dt rating, and full avalanche rating. The gate threshold voltage is 1V maximum at 250µA, and the total gate charge is 68nC at 4.5V, ensuring efficient gate drive requirements. The operating junction temperature range is -55°C to 175°C, with a junction-to-case thermal resistance of 0.9°C/W.

 

The device is housed in a TO-220AB package with through-hole mounting, suitable for power dissipation up to 167W at 25°C case temperature. It is lead-free and RoHS compliant, confirmed by the datasheet. Typical applications include DC-DC converters, motor drives, and power management systems.

IRL1104PBF Quick Information

Product Type: MOSFET
Canonical Name: IRL1104PBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRL1104PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF) confirmed in datasheet

IRL1104PBF Features

  • 40V drain-source breakdown voltage.
  • 104A continuous drain current at 25°C.
  • Ultra-low 8mΩ on-resistance at 10V.
  • Logic-level gate drive (4.5V threshold).
  • TO-220AB through-hole package.

IRL1104PBF Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor drive applications.
  • Suitable for power management systems.
  • Employed in high-current switching loads.

IRL1104PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRL1104PBF?

The drain-source breakdown voltage (Vdss) is 40V.

What is the continuous drain current rating?

The continuous drain current is 104A at Tc=25°C and 74A at Tc=100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 8mΩ at Vgs=10V, Id=62A, and 12mΩ at Vgs=4.5V, Id=52A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package does the IRL1104PBF come in?

It is available in a TO-220AB package (TO-220-3) with through-hole mounting.

Is the IRL1104PBF RoHS compliant?

Yes, it is lead-free (PbF) and RoHS compliant, confirmed by the datasheet.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at Vds=Vgs, Id=250µA.

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