| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
139 pcs
|
139 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge |
The Infineon IRL100HS121 is an N-channel MOSFET belonging to the OptiMOS™5 family, designed for higher power density and switching frequency applications. It offers a drain-source voltage (Vds) of 100V and a maximum on-resistance (RDS(on)) of 42mΩ at 10V gate-source voltage.
Key electrical characteristics include a typical gate charge (Qg tot) of 3.7nC and a gate threshold voltage (Vgs(th)) of 1.7V. The continuous drain current (ID) is rated at 11A at 25°C case temperature with a 10V gate-source voltage.
This MOSFET is housed in a compact PQFN 2mm x 2mm package, suitable for surface mounting. It is supplied on tape and reel with a standard quantity of 4000 units. The operating junction and storage temperature range is from -55°C to +175°C.
Target applications include wireless charging, adapters, and telecom power systems. Its design benefits include reduced parts count and the ability to be driven directly from microcontrollers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.36 | $1.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 100V minimum.
The IRL100HS121 is available in a PQFN package measuring 2mm x 2mm.
The operating junction and storage temperature range is -55°C to +175°C.
The maximum on-resistance is 42mΩ at Vgs = 10V.
The typical total gate charge is 3.7nC.
The continuous drain current is 11A at case temperature 25°C with Vgs = 10V.