IRL100HS121 The Infineon IRL100HS121 is an N-channel MOSFET designed for applications like wireless charging and adapters. It features a 100V drain-source voltage and a low on-resistance.
Mfr Part #:

IRL100HS121

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IRL100HS121 is an N-channel MOSFET designed for applications like wireless charging and adapters. It features a 100V drain-source voltage and a low on-resistance.
✓ Total Stock: 13,159 pcs
$ Price Range: $1.36

IRL100HS121 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,020 pcs
13020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
139 pcs
139 pcs On Request 1 On Request On Request On Request On Request On Request

IRL100HS121 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge

IRL100HS121 Description

Short technical summary and product information.

The Infineon IRL100HS121 is an N-channel MOSFET belonging to the OptiMOS™5 family, designed for higher power density and switching frequency applications. It offers a drain-source voltage (Vds) of 100V and a maximum on-resistance (RDS(on)) of 42mΩ at 10V gate-source voltage.

 

Key electrical characteristics include a typical gate charge (Qg tot) of 3.7nC and a gate threshold voltage (Vgs(th)) of 1.7V. The continuous drain current (ID) is rated at 11A at 25°C case temperature with a 10V gate-source voltage.

 

This MOSFET is housed in a compact PQFN 2mm x 2mm package, suitable for surface mounting. It is supplied on tape and reel with a standard quantity of 4000 units. The operating junction and storage temperature range is from -55°C to +175°C.

 

Target applications include wireless charging, adapters, and telecom power systems. Its design benefits include reduced parts count and the ability to be driven directly from microcontrollers.

IRL100HS121 Quick Information

Product Type: MOSFET
Canonical Name: IRL100HS121 N-channel MOSFET
Subcategory: N-Channel

IRL100HS121 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRL100HS121 Estimated Pricing

Qty Low High
1+ $1.36 $1.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRL100HS121 Features

  • 100V drain-source voltage rating.
  • 42mOhm maximum on-resistance.
  • 3.7nC typical total gate charge.
  • PQFN 2mm x 2mm package.
  • Suitable for wireless charging applications.

IRL100HS121 Applications

  • Ideal for wireless charging.
  • Used in adapter power supplies.
  • Suitable for telecom applications.
  • Enables higher power density.
  • Supports higher switching frequencies.

IRL100HS121 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRL100HS121?

The drain-source voltage (Vds) is 100V minimum.

What package does the IRL100HS121 come in?

The IRL100HS121 is available in a PQFN package measuring 2mm x 2mm.

What is the operating junction temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What is the on-resistance of the IRL100HS121?

The maximum on-resistance is 42mΩ at Vgs = 10V.

What is the total gate charge of the IRL100HS121?

The typical total gate charge is 3.7nC.

What is the continuous drain current rating?

The continuous drain current is 11A at case temperature 25°C with Vgs = 10V.

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