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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Diode Forward Voltage | |
| Forward Transconductance | |
| Gate Charge | |
| Gate Threshold Voltage | |
| Gate to Emitter Leakage Current | |
| Gate-to-Emitter Voltage | |
| IC (Nominal @ TC=100 °C) | |
| ICES (Maximum @ VGE=0 V, VCE=600 V, TJ=150 °C) | |
| ICES (Maximum @ VGE=0 V, VCE=600 V, TJ=25 °C) | |
| IGBT Type | |
| Industrial Grade | |
| Input Type | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| RθJC (Maximum @ Diode) | |
| RθJC (Maximum @ IGBT) | |
| Short Circuit Capability | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Thermal Resistance, Junction-to-Ambient (PCB Mount) | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| VCE(on) (Typical/Maximum @ VGE=15 V, IC=15 A, TJ=125 °C) | |
| VCE(on) (Typical/Maximum @ VGE=15 V, IC=15 A, TJ=150 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Weight | |
| pd (Nominal @ TC=100 °C) |
The IRGSL15B60KDPBF is a 600V, 31A NPT (Non Punch Through) IGBT manufactured by Infineon Technologies. It features a low typical collector-to-emitter saturation voltage of 1.8V at 15A and 25°C, and includes an ultrafast soft recovery diode. The device offers a 10µs short circuit capability and a positive temperature coefficient of VCE(on), enabling excellent current sharing in parallel operation.
Key electrical specifications include a collector-to-emitter voltage rating of 600V, continuous collector current of 31A at 25°C (15A at 100°C), and a pulsed current capability of 62A. The IGBT has a typical gate charge of 56nC and switching energies of 220µJ (turn-on) and 340µJ (turn-off) under test conditions of 400V, 15A, and 22Ω gate resistance. The operating junction temperature range is -55°C to 150°C.
The device is packaged in a TO-262-3 Long Leads (I²Pak, TO-262AA) through-hole package with a weight of 1.44g. Thermal resistance junction-to-case is 0.6°C/W for the IGBT and 2.1°C/W for the diode. The part is lead-free and RoHS compliant (unverified). It is designed for applications such as motor control, power inverters, and industrial drives where robust transient performance and low EMI are required.
600 V.
TO-262-3 Long Leads, I²Pak, TO-262AA (PG-TO262-3).
-55°C to 150°C.
Yes, it is listed as RoHS3 Compliant (unverified).
56 nC typical.
Turn-on energy (Eon) is 220 µJ typical; turn-off energy (Eoff) is 340 µJ typical.
10 µs.