Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 742 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current Continuous (Nominal @ Tc=100 °C) | |
| Collector-to-Emitter Leakage Current (Ices) (Typical/Maximum @ Vce=300 V, Vge=0 V) | |
| Collector-to-Emitter Saturation Voltage (Vce(on)) (Typical @ Vge=15 V, Ic=110 A, Tj=150 °C) | |
| Collector-to-Emitter Saturation Voltage (Vce(on)) (Typical @ Vge=15 V, Ic=200 A) | |
| Collector-to-Emitter Saturation Voltage (Vce(on)) (Typical/Maximum @ Vge=15 V, Ic=110 A) | |
| Collector-to-Emitter Saturation Voltage (Vce(on)) (Typical/Maximum @ Vge=15 V, Ic=35 A) | |
| Current | |
| Gate Charge | |
| Gate Threshold Voltage (Vge(th)) (Minimum/Maximum @ Vce=Vge, Ic=1 mA) | |
| Gate to Emitter Leakage Current | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Nominal @ Tc=100 °C) | |
| Repetitive Peak Collector Current | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Thermal Resistance (Case to Sink) | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Junction-to-Ambient (D2Pak) | |
| Turn-Off Delay Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRGS4055PBF is a trench IGBT from Infineon Technologies optimized for plasma display panel (PDP) sustain and energy recovery circuits. It features a 300V minimum collector-to-emitter breakdown voltage and is capable of handling 110A continuous collector current at 25°C (60A at 100°C). The device offers a low typical collector-to-emitter saturation voltage of 1.7V at 110A with 15V gate drive, contributing to improved panel efficiency. With a power dissipation of 255W at 25°C and a maximum junction temperature of 150°C, it supports high-reliability operation.
Switching performance is characterized by a typical turn-on delay of 44ns and turn-off delay of 245ns under standard test conditions (180V, 35A, 10Ω gate resistor). The gate threshold voltage ranges from 2.6V to 5V, and the total gate charge is 132nC. The device is housed in a D2PAK (TO-263-3) surface-mount package, which provides a compact footprint and good thermal performance with a junction-to-case thermal resistance of 0.5°C/W. The junction-to-ambient thermal resistance for PCB-mounted D2PAK is 40°C/W.
The IRGS4055PBF is designed for robust performance in PDP applications, with high repetitive peak current capability of 270A. It is supplied in a lead-free package, and the datasheet confirms lead-free compliance. Other compliance data (RoHS, MSL, REACH) is marked as unverified in the available database.
| Qty | Low | High |
|---|---|---|
| 100+ | $5.00 | $5.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-to-emitter breakdown voltage is 300V at Vge=0V, Ic=1mA.
The IRGS4055PBF is available in a D2PAK (TO-263-3, D²Pak) surface-mount package.
The operating junction temperature range is -40°C to 150°C.
It is listed as RoHS3 compliant, but this is unverified.
The gate threshold voltage ranges from 2.6V (minimum) to 5.0V (maximum) at Vce=Vge, Ic=1mA.