| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,362 pcs
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3362 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRGPC50U is an UltraFast N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for high-frequency switching applications. It features a collector-emitter voltage rating of 600V and a continuous collector current of 55A at 25°C case temperature (27A at 100°C). The device offers a low collector-emitter saturation voltage of 3V maximum at 15V gate drive and 27A collector current, reducing conduction losses. The gate threshold voltage range is 3.0V to 5.5V. With a maximum power dissipation of 200W at 25°C, the IRGPC50U is suitable for power conversion and motor control circuits. It is packaged in a through-hole TO-247AC (TO-247-3) package, which provides excellent thermal performance. The operating junction temperature range is -55°C to 150°C, ensuring reliability in demanding environments.
| Qty | Low | High |
|---|---|---|
| 25+ | $8.36 | $8.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
55A at 25°C case temperature, derated to 27A at 100°C
TO-247-3 (also known as TO-247AC)
-55°C to 150°C (junction temperature)
Listed as RoHS3 compliant, but this is unverified
Maximum 3V at Vge=15V, Ic=27A
3.0V to 5.5V