IRGP50B60PD1PBF The Infineon IRGP50B60PD1PBF is an n-channel IGBT from the WARP2 series. It offers a 600V collector-emitter voltage and a 75A continuous collector current at 25°C.
Mfr Part #:

IRGP50B60PD1PBF

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IRGP50B60PD1PBF is an n-channel IGBT from the WARP2 series. It offers a 600V collector-emitter voltage and a 75A continuous collector current at 25°C.
✓ Total Stock: 14,787 pcs
$ Price Range: $0.71

IRGP50B60PD1PBF Available from 3 distributors

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12,272 pcs
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10 pcs
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IRGP50B60PD1PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRGP50B60PD1PBF Description

Short technical summary and product information.

The Infineon IRGP50B60PD1PBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the WARP2 series. It features NPT technology with a positive temperature coefficient, lower VCE(SAT), and minimal tail current.

 

Key electrical specifications include a 600V collector-emitter voltage (VCES) and a typical on-state voltage (VCE(on)) of 2.00V at 15V gate-emitter voltage and 33A collector current. The continuous collector current is rated at 75A at 25°C and 45A at 100°C. Maximum power dissipation is 390W at 25°C.

 

This IGBT incorporates a HEXFRED ultra-fast soft-recovery co-pack diode. It is designed for applications requiring higher switching frequencies up to 150kHz, offering lower conduction and switching losses. The component is housed in a TO-247AC package suitable for through-hole mounting.

 

Applications include Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Uninterruptable Power Supplies, and Consumer Electronics Power Supplies.

IRGP50B60PD1PBF Quick Information

Product Type: IGBT
Series: WARP2 SERIES
Canonical Name: Infineon IRGP50B60PD1PBF IGBT
Subcategory: Insulated Gate Bipolar Transistor

IRGP50B60PD1PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRGP50B60PD1PBF Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRGP50B60PD1PBF Features

  • 600V collector-emitter voltage rating.
  • 75A continuous collector current.
  • 390W maximum power dissipation.
  • Integrated ultra-fast soft-recovery diode.
  • TO-247AC package for through-hole mounting.

IRGP50B60PD1PBF Applications

  • Telecom and Server SMPS.
  • PFC and ZVS SMPS circuits.
  • Uninterruptable Power Supplies.
  • Consumer Electronics Power Supplies.

IRGP50B60PD1PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IRGP50B60PD1PBF?

The maximum collector-emitter voltage (VCES) is 600V.

What is the continuous collector current at 25°C?

The continuous collector current (IC) at 25°C is 75A.

What is the maximum power dissipation at 25°C?

The maximum power dissipation (PD) at 25°C is 390W.

What type of diode is co-packaged with the IGBT?

It is a HEXFRED ultra-fast soft-recovery diode.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What is the package type for the IRGP50B60PD1PBF?

The package type is TO-247AC.

Is this component lead-free?

Yes, the component is lead-free.

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