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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRGP50B60PD1PBF is an N-channel IGBT designed for high-power switching applications. It belongs to Infineon's WARP2 ultrafast IGBT family and is rated for a collector-emitter breakdown voltage of 600V and a continuous collector current of 75A. The device can dissipate up to 390W of power.
This IGBT features a standard gate input and is characterized for switching with a test condition of 390V, 33A, 3.3 Ohm, and 15V gate drive. Key switching parameters include a turn-on delay of 30 ns and a turn-off delay of 130 ns. The collector-emitter saturation voltage is typically 2.85V at 15V gate voltage and 50A collector current. The gate charge is 308 nC.
The device is housed in a TO-247-3 package (supplier device package TO-247AC) and supports through-hole mounting. It has an operating temperature range of -55°C to 150°C junction temperature. The switching energy is 255 µJ on and 375 µJ off, and the reverse recovery time is 42 ns.
Typical applications include power inverters, motor drives, and automotive systems requiring robust, high-speed switching performance.
600 V.
75 A.
390 W.
-55°C to 150°C (junction).
TO-247-3 (TO-247AC).
2.85 V at 15V gate voltage and 50A collector current.
Turn-on delay 30 ns, turn-off delay 130 ns.