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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRGP4069DPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It is designed for high efficiency applications and offers low switching losses.
Key electrical specifications include a 600V collector-to-emitter voltage (VCES) and a continuous collector current of 76A at 25°C, derating to 50A at 100°C. The nominal current is 35A. The device features a low collector-to-emitter saturation voltage (VCE(on)) of typically 1.6V at 25°C and 35A. The maximum junction temperature is rated at 175°C.
This IGBT is suitable for a wide range of switching frequencies due to its low VCE(on) and low switching losses. It offers rugged transient performance for increased reliability and excellent current sharing in parallel operation. The package is TO-247AC, suitable for through-hole mounting.
Absolute maximum ratings include a pulse collector current of 105A and a clamped inductive load current of 140A. The gate-to-emitter voltage is ±20V continuous. Power dissipation is rated at 268W at 25°C, derating to 134W at 100°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCES) for the IRGP4069DPBF is 600V.
The continuous collector current rating at 100°C is 50A.
The maximum operating junction temperature is 175°C.
The typical collector-to-emitter saturation voltage at 35A and 25°C is 1.6V.
The IRGP4069DPBF is supplied in a TO-247-3 package.