| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,006 pcs
|
2006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRGP4066DPBF is an Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes trench IGBT technology to achieve low collector-to-emitter saturation voltage (VCE(on) typ. 1.70V at 75A, 25°C) and low switching losses, making it suitable for a wide range of switching frequencies. The device is rated for a collector-to-emitter breakdown voltage of 600V and a continuous collector current of 140A at 25°C (90A at 100°C). It can handle pulse currents up to 225A and clamped inductive load currents up to 300A. The maximum power dissipation is 454W at 25°C case temperature. The IGBT has a maximum junction temperature of 175°C and is designed for rugged transient performance. It features a positive temperature coefficient for VCE(on), which facilitates parallel operation. The device is available in a TO-247-3 package (TO-247AC) with through-hole mounting. It is RoHS3 compliant and has an MSL of 1 (Unlimited). Typical applications include motor drives, inverters, and power supplies requiring high efficiency and reliability.
600V minimum.
TO-247-3 (TO-247AC) through-hole package.
-55°C to 175°C.
Yes, it is listed as RoHS3 compliant (unverified).
140A at 25°C case temperature, 90A at 100°C.
454W at 25°C case temperature.
Yes, it includes an ultrafast soft recovery diode.