| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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76,000 pcs
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76000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature Range | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRGP4066D-EPBF from Infineon Technologies is a 600V, 75A nominal trench IGBT integrated with an ultrafast soft recovery diode. It delivers a low typical VCE(on) of 1.7V at 75A and 15V gate drive, with a maximum of 2.1V at 25°C. The device supports continuous collector currents of 140A at 25°C case temperature and 90A at 100°C.
With a maximum junction temperature of 175°C and thermal resistance junction-to-case of 0.33°C/W for the IGBT, it suits demanding power conversion designs. The positive temperature coefficient of VCE(on) facilitates parallel operation. The IGBT features a short circuit withstand time of at least 5µs as per the datasheet.
Housed in a TO-247-3 through-hole package, the part is mounted using standard TO-247AD pitch. It includes a fast recovery diode with typical reverse recovery time of 155ns. Typical switching energies are 2.47mJ on and 2.16mJ off.
The maximum V(BR)CES is 600 V.
Typical VCE(on) is 1.7 V at 75A, 15V gate drive, at 25°C.
The maximum junction temperature is 175°C.
The IGBT is supplied in a TO-247-3 package with through-hole mounting.
Yes, it includes an ultrafast soft recovery diode with a typical reverse recovery time of 155 ns.