IRGP20B60PDPBF

The IRGP20B60PDPBF is an NPT (Non-Punch Through) IGBT from Infineon Technologies, part of the WARP2 series. It features a co-packaged HEXFRED ultrafast soft recovery diode. Key electrical specifications include a maximum collector-emitter voltage of 600V, continuous collector current of 40A at 25°C (22A at 100°C), and a maximum power dissipation of 220W at 25°C. The typical Vce(on) is 2.05V at 15V gate voltage and 13A collector current, with a maximum of 2.8V at 15V and 20A. Gate charge is 68nC, and switching energies are 95µJ (on) and 100µJ (off) under test conditions of 390V, 13A, 10 Ohm, and 15V. Switching times are 20ns turn-on delay and 115ns turn-off delay. The reverse recovery time of the diode is 42ns. The device has a positive temperature coefficient, enabling parallel operation for higher current applications. It is designed for high-frequency switching up to 150kHz. Applications include telecom and server SMPS, PFC and ZVS SMPS circuits, uninterruptable power supplies, and consumer electronics power supplies. The package is a TO-247-3 (TO-247AC) with through-hole mounting. Operating junction temperature range is -55°C to 150°C. Thermal resistance junction-to-case is 0.58°C/W for the IGBT and 2.5°C/W for the diode. The device is RoHS3 compliant, REACH unaffected, and has an MSL of 1 (unlimited).