IRGIB10B60KD1P

The IRGIB10B60KD1P is an NPT (Non-Punch Through) IGBT manufactured by Infineon Technologies, designed for high-efficiency power switching applications. It features a collector-emitter voltage rating of 600V and a continuous collector current of 16A, making it suitable for medium-power circuits.

This IGBT offers low collector-emitter saturation voltage of 2.1V at 15V gate drive and 10A collector current, contributing to reduced conduction losses. It has a gate charge of 41nC, enabling fast switching with typical turn-on delay of 25ns and turn-off delay of 180ns. The device includes an ultrafast soft recovery diode with a reverse recovery time of 79ns, minimizing switching losses and electromagnetic interference.

With a switching energy of 156µJ (on) and 165µJ (off) under test conditions of 400V, 10A, 50Ω gate resistance, and 15V gate voltage, the IRGIB10B60KD1P is well-suited for applications such as motor drives, power supplies, and induction heating. It operates over a junction temperature range of -55°C to 175°C, ensuring reliability in demanding environments.

The device is packaged in a TO-220-3 Full Pack (also known as TO-220AB Full-Pak) for through-hole mounting, providing excellent thermal performance and electrical isolation. The standard input type ensures compatibility with typical gate drive circuits.