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IRGI4060DPBF IRGI4060DPBF is a 600V, 14A Trench IGBT from Infineon Technologies with an integrated UltraFast Soft Recovery Diode. It features low VCE(on) and low switching losses in a TO-220AB Full-Pak package.
Mfr Part #:

IRGI4060DPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRGI4060DPBF is a 600V, 14A Trench IGBT from Infineon Technologies with an integrated UltraFast Soft Recovery Diode. It features low VCE(on) and low switching losses in a TO-220AB Full-Pak package.
✓ Total Stock: 46 pcs
$ Price Range: $2.03

IRGI4060DPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
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46 pcs
On Request
46 pcs On Request 1 On Request On Request 931 On Request On Request
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IRGI4060DPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
Weight
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IRGI4060DPBF Description

Short technical summary and product information.

The IRGI4060DPBF is a Trench IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for high-efficiency power switching applications. It incorporates an UltraFast Soft Recovery Co-pak Diode, enabling low switching losses and reduced EMI.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of 600V, maximum continuous collector current of 14A at 25°C (7.5A at 100°C), and a maximum power dissipation of 37W at 25°C. The device features low collector-emitter saturation voltage (1.72V typical at 15V, 7.5A) and typical gate charge of 19 nC.

 

The IRGI4060DPBF is offered in a TO-220-3 Full Pack package (TO-220AB Full-Pak) with through-hole mounting. It is suitable for a wide range of switching frequencies and provides positive temperature coefficient for easy paralleling. The device operates over a junction temperature range of -55°C to 150°C.

IRGI4060DPBF Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: IRGI4060DPBF - Trench IGBT with UltraFast Soft Recovery Diode
Subcategory: Single

IRGI4060DPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRGI4060DPBF Estimated Pricing

Qty Low High
200+ $2.03 $2.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRGI4060DPBF Features

  • Low VCE(on) Trench IGBT technology.
  • 600V collector-emitter breakdown voltage.
  • 14A continuous collector current at 25°C.
  • 37W maximum power dissipation.
  • TO-220AB Full-Pak through-hole package.

IRGI4060DPBF Applications

  • Designed for high efficiency switching applications.
  • Suitable for a wide range of switching frequencies.
  • Ideal for applications requiring low switching losses.

IRGI4060DPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the IRGI4060DPBF?

The minimum collector-emitter breakdown voltage is 600 V.

What is the maximum continuous collector current at 25°C?

The maximum continuous collector current at 25°C is 14 A.

What is the package type for the IRGI4060DPBF?

The device is available in a TO-220-3 Full Pack package, supplied as TO-220AB Full-Pak.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRGI4060DPBF RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the typical gate charge?

The typical gate charge is 19 nC.

What is the switching energy for turn-on and turn-off?

Typical switching energy at 400V, 7.5A, 47 Ohm, 15V is 47 µJ for turn-on and 141 µJ for turn-off.

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