| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Weight |
The IRGBC40U is a 600V, 40A UltraFast Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. Designed for high efficiency, it offers a low collector-emitter saturation voltage of 3V at 15V gate drive and 20A collector current. The device is optimized for high operating frequencies above 5kHz, making it suitable for switching applications.
Key electrical characteristics include a continuous collector current of 40A at 25°C (20A at 100°C) and a maximum pulsed current of 160A. Total switching losses are rated at 0.75 mJ (typical) at 25°C, with a typical turn-off delay time of 96 ns and fall time of 43 ns. The IGBT also features a total gate charge of 51 nC (typical) and input capacitance of 1500 pF.
This through-hole device is housed in a TO-220AB package (TO-220-3), offering robust thermal performance with a junction-to-case thermal resistance of 0.77°C/W. The operating junction temperature ranges from -55°C to +150°C, and it supports a maximum power dissipation of 160W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 50+ | $4.23 | $4.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
40A.
-55°C to +150°C.
TO-220AB (TO-220-3).
RoHS3 compliant according to stored data, but this is unverified and low confidence.
0.75 mJ.
51 nC.