IRGB6B60KDPBF The Infineon Technologies IRGB6B60KDPBF is an IGBT transistor designed for power applications. It features a 600V collector-emitter voltage and 13A collector current.
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IRGB6B60KDPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IRGB6B60KDPBF is an IGBT transistor designed for power applications. It features a 600V collector-emitter voltage and 13A collector current.
✓ Total Stock: 49 pcs
$ Price Range: $6.44

IRGB6B60KDPBF Available from 1 distributor

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✓ Non-Authorised
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49 pcs
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IRGB6B60KDPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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IRGB6B60KDPBF Description

Short technical summary and product information.

The IRGB6B60KDPBF from Infineon Technologies is an Insulated Gate Bipolar Transistor (IGBT) suitable for various power control applications. This component features a robust design with a maximum collector-emitter voltage of 600V and a continuous collector current rating of 13A. It exhibits a typical collector-emitter saturation voltage (Vce(on)) of 1.8V and a power dissipation capability of 90W.

 

The IGBT is housed in a standard TO-220AB package, designed for through-hole mounting, making it suitable for integration into power electronic circuits. Its maximum operating temperature is rated at 150°C, ensuring reliable performance under demanding conditions. The device has 3 terminals.

 

Key electrical characteristics include its high voltage and current handling capabilities, making it a versatile component for motor drives, power supplies, and other power management systems. The non-punch through IGBT technology and ultrafast soft recovery diode contribute to its performance characteristics, though specific details on these features are not fully elaborated in the provided data.

 

This component is classified under Power Driver Modules, indicating its role in driving and controlling power semiconductor devices. Its applications span across motor control, consumer electronics, lighting, and alternative energy sectors.

IRGB6B60KDPBF Quick Information

Product Type: IGBT Transistor
Canonical Name: Insulated Gate Bipolar Transistor
Subcategory: Power Driver Module

IRGB6B60KDPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRGB6B60KDPBF Estimated Pricing

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1+ $6.44 $6.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRGB6B60KDPBF Features

  • 600V collector-emitter voltage rating.
  • 13A continuous collector current.
  • 90W maximum power dissipation.
  • TO-220AB package for through-hole mounting.
  • 150°C maximum operating temperature.

IRGB6B60KDPBF Applications

  • Suitable for motor drive applications.
  • Used in consumer electronics.
  • Applicable for lighting systems.
  • Designed for alternative energy.
  • Power management applications.

IRGB6B60KDPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the IRGB6B60KDPBF?

The maximum collector-emitter voltage is 600V.

What is the continuous collector current rating?

The continuous collector current rating is 13A.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage is 1.8V.

What is the maximum power dissipation?

The maximum power dissipation is 90W.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

What package type is the IRGB6B60KDPBF in?

The transistor case style is TO-220AB.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

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