| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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49 pcs
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49 pcs | On Request | 1 | On Request | On Request | 913 | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The IRGB6B60KDPBF from Infineon Technologies is an Insulated Gate Bipolar Transistor (IGBT) suitable for various power control applications. This component features a robust design with a maximum collector-emitter voltage of 600V and a continuous collector current rating of 13A. It exhibits a typical collector-emitter saturation voltage (Vce(on)) of 1.8V and a power dissipation capability of 90W.
The IGBT is housed in a standard TO-220AB package, designed for through-hole mounting, making it suitable for integration into power electronic circuits. Its maximum operating temperature is rated at 150°C, ensuring reliable performance under demanding conditions. The device has 3 terminals.
Key electrical characteristics include its high voltage and current handling capabilities, making it a versatile component for motor drives, power supplies, and other power management systems. The non-punch through IGBT technology and ultrafast soft recovery diode contribute to its performance characteristics, though specific details on these features are not fully elaborated in the provided data.
This component is classified under Power Driver Modules, indicating its role in driving and controlling power semiconductor devices. Its applications span across motor control, consumer electronics, lighting, and alternative energy sectors.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.44 | $6.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The continuous collector current rating is 13A.
The typical collector-emitter saturation voltage is 1.8V.
The maximum power dissipation is 90W.
The maximum operating temperature is 150°C.
The transistor case style is TO-220AB.
The RoHS status is RoHS3 Compliant.