| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,356 pcs
|
2356 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| IGBT Type | |
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| Tape & Reel | |
| Td (on | |
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| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The Infineon IRGB4B60KD1PBF is a single NPT (Non-Punch Through) IGBT designed for medium-voltage switching applications. It offers a collector-emitter voltage rating of 600V and a continuous collector current of 11A, with a power dissipation of 63W. The device features a low Vce(on) of 2.5V at 15V gate voltage and 4A collector current, ensuring efficient conduction. The IGBT includes a fast recovery diode with a reverse recovery time of 93 ns. Switching energies are 73 µJ (turn-on) and 47 µJ (turn-off) under test conditions of 400V, 4A, and 100Ω gate resistor. The gate charge is 12 nC. The operating junction temperature range is -55°C to 175°C. The device is packaged in a TO-220-3 through-hole package (TO-220AB), suitable for standard PCB mounting. This IGBT is suitable for applications such as motor drives, power supplies, and induction heating.
The collector-emitter voltage rating is 600 V.
It is available in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to 175°C.
It is listed as RoHS3 compliant, but this status is unverified.
The continuous collector current rating is 11 A.
The maximum Vce(on) is 2.5 V at Vge=15V and Ic=4A.
Typical switching energies are 73 µJ (turn-on) and 47 µJ (turn-off) at 400V, 4A, 100Ω, 15V.