| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23,899 pcs
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23899 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRGB10B60KD is an Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It features Non Punch Through IGBT technology, offering low VCE(on) and low diode VF.
Key electrical specifications include a 600V collector-to-emitter voltage (VCES) and a continuous collector current (IC) of 22A at 25°C, derating to 12A at 100°C. The pulsed collector current (ICM) is 44A. The device has a gate-to-emitter voltage (VGE) rating of ±20V. Power dissipation is 156W at 25°C and 62W at 100°C.
Thermal characteristics include a junction-to-case thermal resistance of 0.8°C/W for the IGBT and 3.4°C/W for the diode. The operating junction and storage temperature range is -55°C to +150°C.
This IGBT is supplied in a TO-220AB package, suitable for through-hole mounting. Its design benefits include benchmark efficiency for motor control, rugged transient performance, low EMI, and excellent current sharing in parallel operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCES) for the IRGB10B60KD is 600V.
The continuous collector current (IC) at 25°C for the IRGB10B60KD is 22A.
The IRGB10B60KD is supplied in a TO-220AB package.
The operating junction temperature range for the IRGB10B60KD is -55°C to +150°C.
The junction-to-case thermal resistance for the IGBT is 0.8°C/W.
The typical gate threshold voltage (VGE(th)) for the IRGB10B60KD is 4.5V.
The RoHS status of the IRGB10B60KD is RoHS3 Compliant.