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IRG7PH35UD-EP IRG7PH35UD-EP is a 1200V, 50A Trench IGBT by Infineon Technologies. It features low V_CE(on), low switching losses, and an ultrafast soft recovery co-pak diode.
Mfr Part #:

IRG7PH35UD-EP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRG7PH35UD-EP is a 1200V, 50A Trench IGBT by Infineon Technologies. It features low V_CE(on), low switching losses, and an ultrafast soft recovery co-pak diode.
✓ Total Stock: 3,700 pcs

IRG7PH35UD-EP Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,700 pcs
On Request
3700 pcs On Request 1 On Request On Request 20+ On Request On Request
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IRG7PH35UD-EP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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IRG7PH35UD-EP Description

Short technical summary and product information.

The IRG7PH35UD-EP is an n-channel Trench Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode from Infineon Technologies. It is rated for a collector-emitter voltage (V_CES) of 1200 V and a continuous collector current of 50 A at 25°C case temperature (25 A at 100°C). The device offers low collector-emitter saturation voltage (1.9 V typical at 15V gate, 20A) and low switching losses, making it suitable for a range of power conversion applications. The gate threshold voltage is between 3.0 V and 6.0 V. It comes in a TO-247-3 through-hole package (supplier device package TO-247AD) with lead-free construction. The operating junction temperature range is -55°C to 150°C.

IRG7PH35UD-EP Quick Information

Product Type: IGBT
Canonical Name: IRG7PH35UD-EP IGBT with Ultrafast Soft Recovery Diode
Subcategory: Single IGBT with Diode

IRG7PH35UD-EP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Vendor Undefined
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRG7PH35UD-EP Features

  • 1200V V_CES Trench IGBT technology.
  • 50A continuous collector current at 25°C.
  • Low V_CE(ON) typical 1.9V at 15V, 20A.
  • Ultrafast soft recovery co-pak diode.
  • Lead-free and RoHS3 compliant.

IRG7PH35UD-EP Applications

  • Uninterruptible Power Supplies (UPS).
  • Welding power sources.
  • Solar inverter circuits.
  • Induction heating equipment.

IRG7PH35UD-EP FAQs

4 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the IRG7PH35UD-EP?

The collector-emitter voltage (V_CES) is 1200 V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the IRG7PH35UD-EP come in?

It is supplied in a TO-247-3 through-hole package (TO-247AD).

Is the IRG7PH35UD-EP RoHS compliant?

The datasheet indicates it is Lead-Free, and it is listed as RoHS3 Compliant.

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