IRG4PSH71UDPBF The Vishay Dale IRG4PSH71UDPBF is an IGBT transistor designed for high-voltage applications. It features a 1200V breakdown voltage and a 99A continuous collector current.
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IRG4PSH71UDPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRG4PSH71UDPBF is an IGBT transistor designed for high-voltage applications. It features a 1200V breakdown voltage and a 99A continuous collector current.
✓ Total Stock: 3 pcs
$ Price Range: $4.16

IRG4PSH71UDPBF Available from 1 distributor

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IRG4PSH71UDPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IRG4PSH71UDPBF Description

Short technical summary and product information.

The IRG4PSH71UDPBF from Vishay Dale is an Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It offers a high collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 99A.

 

This IGBT is optimized for operating frequencies between 8 to 40kHz in hard switching and up to 200kHz in resonant mode soft switching. It features ultra-fast switching speeds and a Generation 4 IGBT design for improved efficiency.

 

The component is housed in an industry-benchmark Super-247 package (TO-274AA), providing enhanced power handling capability compared to standard TO-247 packages. The mounting type is through hole, suitable for various assembly processes.

 

Key electrical specifications include a maximum power dissipation of 350W, a Vce(on) of 2.7V at 15V/70A, and a pulsed collector current of 200A. The operating temperature range is -55°C to 150°C.

IRG4PSH71UDPBF Quick Information

Product Type: IGBT Transistor
Canonical Name: International Rectifier (Infineon Technologies) IRG4PSH71UDPBF IGBT
Subcategory: Single IGBT

IRG4PSH71UDPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRG4PSH71UDPBF Estimated Pricing

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1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRG4PSH71UDPBF Features

  • 1200V collector-emitter breakdown voltage.
  • 99A maximum continuous collector current.
  • 350W maximum power dissipation.
  • Ultra-fast switching speeds.
  • Super-247 package for high power handling.

IRG4PSH71UDPBF Applications

  • Optimized for 8-40kHz hard switching.
  • Suitable for 200kHz resonant mode soft switching.
  • High-power industrial applications.
  • Power conversion systems.

IRG4PSH71UDPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IRG4PSH71UDPBF?

The maximum collector-emitter voltage breakdown is 1200V.

What is the maximum collector current rating?

The maximum collector current is 99A.

What is the power dissipation of this IGBT?

The maximum power dissipation is 350W.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the IRG4PSH71UDPBF available in?

It is available in a SUPER-247 (TO-274AA) through-hole package.

What is the gate charge of this device?

The gate charge is 370nC.

What are the switching energy values?

The turn-on switching energy is 4.77mJ and the turn-off switching energy is 9.54mJ.

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