| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRG4PSH71UDPBF from Vishay Dale is an Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It offers a high collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 99A.
This IGBT is optimized for operating frequencies between 8 to 40kHz in hard switching and up to 200kHz in resonant mode soft switching. It features ultra-fast switching speeds and a Generation 4 IGBT design for improved efficiency.
The component is housed in an industry-benchmark Super-247 package (TO-274AA), providing enhanced power handling capability compared to standard TO-247 packages. The mounting type is through hole, suitable for various assembly processes.
Key electrical specifications include a maximum power dissipation of 350W, a Vce(on) of 2.7V at 15V/70A, and a pulsed collector current of 200A. The operating temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage breakdown is 1200V.
The maximum collector current is 99A.
The maximum power dissipation is 350W.
The operating junction temperature range is -55°C to 150°C.
It is available in a SUPER-247 (TO-274AA) through-hole package.
The gate charge is 370nC.
The turn-on switching energy is 4.77mJ and the turn-off switching energy is 9.54mJ.