Mfr Part #:

IRG4PSC71UD

Mfr Name: Vishay

The Vishay Dale IRG4PSC71UD is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It offers a VCES of 600V and a continuous collector current of 85A.

✓ Total Stock: 1,071 pcs

$ Price Range: $0.99

IRG4PSC71UD Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	71 pcs On Request	71 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRG4PSC71UD Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Input Capacitance	7500pF
Mounting Type	Through Hole
Reverse Recovery Time	82ns

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IRG4PSC71UD Description

Short technical summary and product information.

The IRG4PSC71UD from Vishay Dale is a Generation 4 IGBT designed for high efficiency with minimal switching and conduction losses. This n-channel transistor features an integrated HEXFRED ultrafast, ultrasoft recovery anti-parallel diode, making it suitable for bridge configurations.

Key electrical specifications include a Collector-to-Emitter Voltage (VCES) of 600V, a continuous collector current of 85A at 25°C (60A at 100°C), and a typical VCE(on) of 1.67V at 60A. The device boasts a maximum power dissipation of 350W at 25°C.

Packaged in the industry-benchmark SUPER-247, it offers higher power handling capability compared to the TO-247 package. The operating temperature range is -55°C to +150°C. This IGBT is optimized for specific application conditions, providing maximum power density and cost/space savings in designs requiring multiple paralleled IGBTs.

Benefits include tighter parameter distribution and higher efficiency compared to prior generations. The co-packaged HEXFRED diodes are optimized for performance with IGBTs.

IRG4PSC71UD Quick Information

Product Type: Insulated Gate Bipolar Transistor

Canonical Name: Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Subcategory: Insulated Gate Bipolar Transistor

IRG4PSC71UD Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRG4PSC71UD Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRG4PSC71UD Features

600V Collector-to-Emitter Voltage.
85A Continuous Collector Current.
Ultrafast soft recovery diode included.
SUPER-247 package for high power.
Generation 4 IGBT design for efficiency.

IRG4PSC71UD Applications

Suitable for bridge configurations.
High power density applications.
Designs requiring paralleled IGBTs.
Optimized for switching applications.

IRG4PSC71UD FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum Collector-to-Emitter Voltage (VCES) for the IRG4PSC71UD?

The maximum Collector-to-Emitter Voltage (VCES) for the IRG4PSC71UD is 600V.

What is the continuous collector current rating of the IRG4PSC71UD?

The IRG4PSC71UD has a continuous collector current rating of 85A at 25°C and 60A at 100°C.

What type of package does the IRG4PSC71UD use?

The IRG4PSC71UD uses the SUPER-247 package.

What is the operating temperature range for the IRG4PSC71UD?

The operating junction and storage temperature range for the IRG4PSC71UD is -55°C to +150°C.

What is the typical VCE(on) for the IRG4PSC71UD?

The typical VCE(on) for the IRG4PSC71UD is 1.67V at VGE = 15V and IC = 60A.

What is the maximum power dissipation of the IRG4PSC71UD?

The maximum power dissipation for the IRG4PSC71UD is 350W at 25°C.