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IRG4PH50SPBF The IRG4PH50SPBF is a standard speed IGBT from Infineon Technologies rated at 1200V Vces and 57A Ic in a TO-247AC package.
Mfr Part #:

IRG4PH50SPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRG4PH50SPBF is a standard speed IGBT from Infineon Technologies rated at 1200V Vces and 57A Ic in a TO-247AC package.
✓ Total Stock: 7,710 pcs

IRG4PH50SPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
6,565 pcs
On Request
6565 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,145 pcs
On Request
1145 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRG4PH50SPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Gate Charge
Industrial Grade
Input Type
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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IRG4PH50SPBF Description

Short technical summary and product information.

The IRG4PH50SPBF is a standard speed insulated gate bipolar transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 57A, with a maximum power dissipation of 200W.

 

Key electrical characteristics include a typical saturation voltage (Vce(on)) of 1.7V at Vge=15V and Ic=33A, a total gate charge of 167 nC, and switching energies of 1.8 mJ (turn-on) and 19.6 mJ (turn-off) under test conditions of 960V, 33A, 5 Ohm, 15V. The device has a standard gate input type.

 

The IRG4PH50SPBF is housed in a TO-247-3 package (supplier device package TO-247AC) for through-hole mounting, suitable for high-power applications. It operates over a junction temperature range of -55°C to 150°C.

IRG4PH50SPBF Quick Information

Product Type: Insulated Gate Bipolar Transistor (IGBT)
Canonical Name: IRG4PH50SPBF Standard Speed IGBT
Subcategory: Single IGBT

IRG4PH50SPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRG4PH50SPBF Features

  • 1200V collector-emitter breakdown voltage.
  • 57A continuous collector current rating.
  • 200W maximum power dissipation capability.
  • Standard gate input type for easy drive.
  • TO-247AC through-hole mounting package.

IRG4PH50SPBF Applications

  • Used in motor drive inverters.
  • Ideal for uninterruptible power supplies.
  • Suitable for welding equipment applications.
  • Applicable in induction heating systems.

IRG4PH50SPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter breakdown voltage of the IRG4PH50SPBF?

The maximum collector-emitter breakdown voltage (Vces) is 1200V.

What is the continuous collector current rating?

The maximum continuous collector current (Ic) is 57A.

What package type is the IRG4PH50SPBF available in?

It is available in a TO-247-3 (TO-247AC) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRG4PH50SPBF RoHS compliant?

RoHS3 compliance is indicated but unverified.

What is the typical saturation voltage (Vce(on))?

The maximum Vce(on) is 1.7V at Vge=15V, Ic=33A.

What is the maximum power dissipation?

The maximum power dissipation (Pd) is 200W.

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