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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 720 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRG4PH50KPBF is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It is designed for high-voltage, high-current switching applications, offering a collector-emitter voltage rating of 1200V and a continuous collector current of 45A.
The device features a typical gate charge of 180 nC and a maximum collector-emitter saturation voltage of 3.5V at 15V gate voltage and 24A collector current. Switching energies are specified at 1.21 mJ (turn-on) and 2.25 mJ (turn-off) under test conditions of 960V, 24A, 5Ω gate resistance, and 15V gate drive. Typical switching times include a turn-on delay of 36 ns and turn-off delay of 200 ns.
The IGBT is housed in a TO-247-3 package (supplier device package TO-247AC) with a through-hole mounting style. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 200W.
Typical applications include motor drives, power supplies, induction heating, and other high-power inverters. The standard gate type allows for easy integration with common gate drive circuits.
1200V.
TO-247-3 (supplier device package TO-247AC), through-hole mounting.
-55°C to 150°C junction temperature.
Listed as RoHS3 compliant, but unverified (low confidence).
45A.
180 nC.
Turn-on delay 36 ns, turn-off delay 200 ns.