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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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70,000 pcs
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70000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRG4PH40UDPBF is a discrete IGBT manufactured by Infineon Technologies. It is rated for a collector-emitter voltage of 1200 V and a collector current of 41 A, with a maximum power dissipation of 160 W. The part is designed for through-hole mounting and is supplied in a TO-247-3 package with the TO-247AC supplier device package.
Key electrical specifications include a typical gate charge of 86 nC and a maximum collector-emitter saturation voltage of 3.1 V at Vge = 15 V and Ic = 21 A. The device shows typical switching energies of 1.8 mJ at turn-on and 1.93 mJ at turn-off under 800 V, 21 A, 10 Ω gate conditions. Turn-on and turn-off delay times are typically 46 ns and 97 ns, respectively. Reverse recovery time is typically 63 ns.
The IGBT operates over a junction temperature range of -55°C to 150°C. Its standard input type makes it suitable for use in high-voltage, high-current switching circuits. Each part is listed as RoHS3 compliant, although this compliance status has not been independently verified.
1200 V.
41 A.
TO-247-3 package with TO-247AC supplier package, through-hole mounting.
-55°C to 150°C junction temperature.
Typical gate charge is 86 nC.
Typical turn-on energy is 1.8 mJ and turn-off energy is 1.93 mJ, measured at 800V, 21A, 10Ω, 15V.
The part is listed as RoHS3 compliant.