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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 1106 | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRG4PH40UD-EPBF is an ultrafast copack IGBT (Insulated Gate Bipolar Transistor) with integrated freewheeling diode, manufactured by Infineon Technologies. This device is designed for high-speed switching applications operating in the 5-40kHz range. It features a maximum collector-emitter voltage of 1200V, a maximum collector current of 41A, and a maximum power dissipation of 160W. The typical gate charge is 86 nC, and the switching energy is 1.8 mJ (on) and 1.93 mJ (off) at 800V, 21A, 10Ω, 15V test conditions. The device has a standard input type and provides a collector-emitter saturation voltage of 3.1V maximum at Vge=15V, Ic=21A. The reverse recovery time of the integral diode is 63 ns typical. The IGBT is packaged in a TO-247-3 (TO-247AC) through-hole package, suitable for robust mounting in power electronic circuits. The operating junction temperature range is -55°C to 150°C. This component is RoHS and REACH compliant (unverified confidence). It is suitable for applications such as motor drives, uninterruptible power supplies, and induction heating where high voltage and high current switching with fast recovery is required.
The maximum collector-emitter voltage is 1200 V.
The maximum collector current is 41 A.
The maximum power dissipation is 160 W.
It is available in a TO-247-3 (TO-247AC) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The part is marked as RoHS3 compliant, but this is unverified and should be confirmed with documentation.
The typical gate charge is 86 nC.