| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRG4PH30KD is a single N-channel IGBT manufactured by Infineon Technologies. It is designed for high-voltage switching applications requiring moderate current levels. The device is rated for a maximum collector-emitter voltage of 1200V, a nominal collector current of 20A, and a maximum power dissipation of 100W.
Key electrical characteristics include a typical gate charge of 53 nC, switching energies of 950 µJ (turn-on) and 1.15 mJ (turn-off) under test conditions of 800V, 10A, 23Ω, and 15V gate drive. Turn-on delay time is 39 ns, turn-off delay time is 220 ns. The maximum collector-emitter saturation voltage is 4.2V at Vge=15V and Ic=10A. The device also features a reverse recovery time of 50 ns.
The IRG4PH30KD is housed in a TO-247-3 package (supplier device package TO-247AC) with through-hole mounting. It operates over a junction temperature range of -55°C to 150°C. The input type is standard, making it compatible with typical gate drive circuits.
| Qty | Low | High |
|---|---|---|
| 150+ | $2.76 | $2.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200 V.
TO-247-3 (through-hole).
-55°C to 150°C (junction temperature).
RoHS3 compliant (unverified, low confidence).
20 A (nominal).
100 W (maximum).
53 nC.