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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | 1848/ | On Request | On Request | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRG4PH20KDPBF is a discrete Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 11A, with a power dissipation of 60W. The device is housed in a through-hole TO-247-3 package (supplier package TO-247AC), suitable for robust mounting and thermal management.
Electrical characteristics include a typical collector-emitter saturation voltage of 4.3V at 15V gate drive and 5A collector current, a gate charge of 28nC, and fast switching with turn-on delay of 50ns and turn-off delay of 100ns. The switching energy is 620µJ during turn-on and 300µJ during turn-off. The reverse recovery time is 51ns. The operating temperature range is -55°C to 150°C (junction).
The device is listed as RoHS3 compliant, with MSL level 1 (unlimited) and REACH unaffected status, though these compliance claims are unverified. The part is commonly used in motor drives, power supplies, and industrial power conversion systems.
The collector-emitter breakdown voltage is 1200V.
It comes in a through-hole TO-247-3 package (supplier device package TO-247AC).
The operating temperature range is -55°C to 150°C (junction).
It is listed as RoHS3 compliant, but this is unverified and low confidence.
The continuous collector current is 11A.
The gate charge is 28 nC.
The switching energy is 620µJ during turn-on and 300µJ during turn-off, tested at 800V, 5A, 50Ω, 15V.