| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,565 pcs
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6565 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vce(on) (Max) @ Vge, Ic | |
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The IRG4PF50WPBF is an N-channel IGBT from Infineon Technologies, designed for high-voltage switching applications. It is rated for a maximum collector-emitter voltage of 900V and a maximum collector current of 51A, with a maximum power dissipation of 200W.
The device features a typical gate charge of 160nC and a maximum collector-emitter saturation voltage of 2.7V at Vge=15V and Ic=28A. Switching characteristics include a typical turn-on delay time of 29ns and a typical turn-off delay time of 110ns, with switching energies of 190µJ (on) and 1.06mJ (off) under test conditions of 720V, 28A, 5Ohm, and 15V.
The IRG4PF50WPBF is housed in a TO-247-3 package with a supplier device package of TO-247AC, and is designed for through-hole mounting. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding thermal environments.
This IGBT is lead-free and RoHS3 compliant, supporting environmentally conscious designs. Its standard input type and robust electrical characteristics make it a suitable choice for power conversion and motor control circuits.
The maximum collector-emitter voltage is 900V.
The maximum collector current is 51A.
The operating temperature range is -55°C to 150°C (junction temperature).
The package is TO-247-3 with a supplier device package of TO-247AC, and it is through-hole mountable.
The IRG4PF50WPBF is listed as RoHS3 compliant and is lead-free.
The maximum power dissipation is 200W.
The typical turn-on delay time is 29ns and the typical turn-off delay time is 110ns, measured at 720V, 28A, 5Ohm, and 15V.