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IRG4PF50WDPBF IRG4PF50WDPBF is a 900V, 51A IGBT from Infineon Technologies in a TO-247AC through-hole package. It features 200W power dissipation and standard gate drive.
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IRG4PF50WDPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRG4PF50WDPBF is a 900V, 51A IGBT from Infineon Technologies in a TO-247AC through-hole package. It features 200W power dissipation and standard gate drive.
✓ Total Stock: 1,414 pcs

IRG4PF50WDPBF Available from 1 distributor

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Components Technology Group, Inc. ✓
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1,414 pcs
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IRG4PF50WDPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Input Type
Lead Style
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Tape & Reel
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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IRG4PF50WDPBF Description

Short technical summary and product information.

The IRG4PF50WDPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is rated for a collector-emitter breakdown voltage of 900V and a continuous collector current of 51A, with a maximum power dissipation of 200W. The device is housed in a TO-247AC through-hole package (TO-247-3), suitable for high-power switching applications.

 

Electrical characteristics include a collector-emitter saturation voltage of 2.7V at 15V gate drive and 28A collector current. Switching performance is characterized by a turn-on energy of 2.63mJ and turn-off energy of 1.34mJ under test conditions of 720V, 28A, 5 ohm gate resistor, and 15V gate drive. The device has a gate charge of 160nC and switching times with a turn-on delay of 71ns and turn-off delay of 150ns. The internal diode has a reverse recovery time of 90ns.

 

The operating junction temperature range is -55°C to 150°C. The part is indicated as lead-free per the datasheet. It is designed for standard gate drive levels and is suitable for applications requiring high voltage and current handling.

IRG4PF50WDPBF Quick Information

Product Type: IGBT
Series: Warp 20-100kHz
Canonical Name: IRG4PF50WDPBF IGBT
Subcategory: Single

IRG4PF50WDPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRG4PF50WDPBF Features

  • 900V collector-emitter breakdown voltage.
  • 51A continuous collector current rating.
  • 200W maximum power dissipation.
  • Through-hole TO-247AC package.
  • Standard gate drive input level.

IRG4PF50WDPBF Applications

  • Used in high-voltage power switching circuits.
  • Suitable for motor drive inverters.
  • Applicable in uninterruptible power supplies.
  • Ideal for induction heating systems.

IRG4PF50WDPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the IRG4PF50WDPBF?

The collector-emitter breakdown voltage is 900V.

What is the maximum collector current for the IRG4PF50WDPBF?

The maximum continuous collector current is 51A.

What is the power dissipation rating of the IRG4PF50WDPBF?

The maximum power dissipation is 200W.

What package type does the IRG4PF50WDPBF use?

The device is in a TO-247AC through-hole package (TO-247-3).

What is the operating temperature range of the IRG4PF50WDPBF?

The operating junction temperature range is -55°C to 150°C.

What is the gate charge of the IRG4PF50WDPBF?

The gate charge is 160 nC.

What is the collector-emitter saturation voltage of the IRG4PF50WDPBF?

The collector-emitter saturation voltage is 2.7V maximum at Vge=15V and Ic=28A.

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