| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IRG4PF50WDPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is rated for a collector-emitter breakdown voltage of 900V and a continuous collector current of 51A, with a maximum power dissipation of 200W. The device is housed in a TO-247AC through-hole package (TO-247-3), suitable for high-power switching applications.
Electrical characteristics include a collector-emitter saturation voltage of 2.7V at 15V gate drive and 28A collector current. Switching performance is characterized by a turn-on energy of 2.63mJ and turn-off energy of 1.34mJ under test conditions of 720V, 28A, 5 ohm gate resistor, and 15V gate drive. The device has a gate charge of 160nC and switching times with a turn-on delay of 71ns and turn-off delay of 150ns. The internal diode has a reverse recovery time of 90ns.
The operating junction temperature range is -55°C to 150°C. The part is indicated as lead-free per the datasheet. It is designed for standard gate drive levels and is suitable for applications requiring high voltage and current handling.
The collector-emitter breakdown voltage is 900V.
The maximum continuous collector current is 51A.
The maximum power dissipation is 200W.
The device is in a TO-247AC through-hole package (TO-247-3).
The operating junction temperature range is -55°C to 150°C.
The gate charge is 160 nC.
The collector-emitter saturation voltage is 2.7V maximum at Vge=15V and Ic=28A.