| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,149 pcs
|
1149 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Switching Energy | |
| Tape & Reel | |
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| Vce(on) (Max) @ Vge, Ic | |
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The IRG4PC50WPBF is an N-Channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies. It features a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 55A, making it suitable for medium-power switching applications. The device offers a maximum power dissipation of 200W and operates over a junction temperature range of -55°C to 150°C.
This IGBT is housed in a standard TO-247-3 through-hole package (supplier package TO-247AC). It uses a standard input type and has a gate charge of 180nC. Switching characteristics include turn-on and turn-off delay times of 46ns and 120ns, respectively. The total switching energy is 80µJ (on) and 320µJ (off), measured under test conditions of 480V, 27A, 5 Ohm gate resistor, and 15V gate drive.
600V.
TO-247-3 (supplier package TO-247AC).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
55A.
180 nC.
80 µJ (on) and 320 µJ (off) under test conditions.