| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,222 pcs
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3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRG4PC50FDPBF is a Generation 4 Fast CoPack IGBT designed for medium operating frequencies (1-5 kHz in hard switching, >20 kHz in resonant mode). It integrates an ultrafast soft recovery HEXFRED anti-parallel diode, making it suitable for bridge configurations.
Key electrical specifications include a maximum collector-emitter voltage of 600V, continuous collector current of 70A at 25°C (39A at 100°C), and a low typical VCE(on) of 1.45V at 15V gate voltage and 39A collector current. The device offers 200W power dissipation at 25°C case temperature.
The IRG4PC50FDPBF is housed in the industry-standard TO-247AC through-hole package and is designed as a drop-in replacement for equivalent Generation 3 IR IGBTs. It provides tighter parameter distribution and higher efficiency than previous generations.
The maximum collector-emitter voltage (VCES) is 600V.
The continuous collector current (IC) is 70A at 25°C case temperature.
It is available in a TO-247-3 (TO-247AC) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, though this is unverified from the manufacturer.