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177 pcs
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177 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRG4PC40WPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) designed for Switch-Mode Power Supply and PFC applications. It offers a collector-to-emitter breakdown voltage of 600V and a continuous collector current of 40A at 25°C, reducing to 20A at 100°C.
This IGBT boasts low conduction losses and industry-benchmark switching losses, contributing to improved efficiency in power supply topologies. It is particularly beneficial for single-ended converters and boost PFC topologies rated at 150W and higher. The device operates within a junction temperature range of -55°C to +150°C.
The IRG4PC40WPBF comes in a TO-247A package suitable for through-hole mounting. Key electrical characteristics include a typical gate-to-emitter voltage of ±20V, a typical VCE(on) of 2.05V at 15V gate-emitter voltage and 20A collector current, and various capacitance values such as input capacitance (Cies) of 1900pF.
Thermal performance is supported by a junction-to-case thermal resistance of 0.77°C/W. The maximum power dissipation is rated at 160W at 25°C and 65W at 100°C. Soldering temperature is specified at 300°C for 10 seconds.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter breakdown voltage is 600V.
The continuous collector current at 25°C is 40A.
The maximum power dissipation at 25°C is 160W.
The operating junction temperature range is -55°C to +150°C.
The IRG4PC40WPBF is available in a TO-247A package.