| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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IRG4PC30UDPBF is an N-channel IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies. It is designed for high-efficiency switching applications with a collector-emitter breakdown voltage of 600V and a continuous collector current rating of 23A. The device has a maximum power dissipation of 100W. The collector-emitter saturation voltage is typically 2.1V at 15V gate-emitter voltage and 12A collector current.
The IGBT features a standard gate input with a gate charge of 50 nC. Switching energies are 380µJ (turn-on) and 160µJ (turn-off) under test conditions of 480V, 12A, 23 ohm gate resistance, and 15V gate drive. Turn-on delay time is 40ns and turn-off delay is 91ns. Reverse recovery time is 42ns.
The device is housed in a through-hole TO-247-3 package with a supplier device package of TO-247AC. Operating junction temperature range is -55°C to 150°C. This IGBT is suitable for motor drives, inverters, and power conversion systems requiring high voltage and current handling.
600V.
TO-247-3 (through-hole) with supplier device package TO-247AC.
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
23A.
100W.
2.1V at 15V gate-emitter voltage and 12A collector current.