| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,512 pcs
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4512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRG4PC30KD is a single IGBT transistor manufactured by Infineon Technologies. It is designed for high-voltage switching applications, with a maximum collector-emitter voltage of 600V and a maximum collector current of 28A. The device can dissipate up to 100W of power, making it suitable for power conversion and motor control circuits.
Key electrical characteristics include a typical turn-on delay time of 60ns and a turn-off delay time of 160ns under test conditions of 480V, 16A, 23Ω, and 15V. The switching energy is typically 600µJ during turn-on and 580µJ during turn-off. The gate charge is 67nC, and the collector-emitter saturation voltage is 2.7V maximum at Vge=15V and Ic=16A. The reverse recovery time is 42ns.
The device operates over a junction temperature range of -55°C to 150°C. It is available in a through-hole TO-247-3 package, with a supplier device package of TO-247AC. This package is suitable for PCB mounting in power electronics designs.
| Qty | Low | High |
|---|---|---|
| 150+ | $2.87 | $2.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The maximum collector current is 28A.
The maximum power dissipation is 100W.
The operating junction temperature range is -55°C to 150°C.
The IRG4PC30KD is available in a TO-247-3 through-hole package, with a supplier device package of TO-247AC.
The RoHS status is reported as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.