IRG4PC30FD The Vishay Dale IRG4PC30FD is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It features a 600V collector-to-emitter voltage and a continuous collector current of 31A at 25°C.
Mfr Part #:

IRG4PC30FD

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRG4PC30FD is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode. It features a 600V collector-to-emitter voltage and a continuous collector current of 31A at 25°C.
✓ Total Stock: 5 pcs
$ Price Range: $6.44

IRG4PC30FD Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

IRG4PC30FD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Input Capacitance
Weight

IRG4PC30FD Description

Short technical summary and product information.

The Vishay Dale IRG4PC30FD is a Generation 4 Fast CoPack IGBT designed for medium operating frequencies. It offers a collector-to-emitter voltage (VCES) of 600V and a continuous collector current (IC) of 31A at 25°C, derating to 17A at 100°C.

 

This IGBT is co-packaged with an ultrafast, ultra-soft-recovery HEXFRED™ diode, making it suitable for bridge configurations. Key electrical characteristics include a typical gate-to-emitter voltage (VGE) of ±20V, a typical on-state voltage (VCE(on)) of 1.59V at 15V VGE and 17A IC, and various switching parameters like turn-on delay, rise time, turn-off delay, and fall time.

 

The device is housed in an industry-standard TO-247AC package. Thermal resistance values include Junction-to-Case for the IGBT (1.2°C/W) and the diode (2.5°C/W), as well as Junction-to-Ambient (40°C/W).

 

Designed as a potential drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs, the IRG4PC30FD offers high efficiency and optimized performance for specific application conditions.

IRG4PC30FD Quick Information

Product Type: Insulated Gate Bipolar Transistor
Canonical Name: Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Subcategory: Power Driver Module

IRG4PC30FD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRG4PC30FD Estimated Pricing

Qty Low High
1+ $6.44 $6.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRG4PC30FD Features

  • 600V collector-to-emitter voltage.
  • 31A continuous collector current.
  • Integrated ultrafast soft recovery diode.
  • Industry standard TO-247AC package.
  • Optimized for medium operating frequencies.

IRG4PC30FD Applications

  • Used in high-voltage power switching circuits
  • Suitable for motor control applications
  • Ideal for power conversion systems
  • Supports inductive load switching

IRG4PC30FD FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-to-emitter voltage for the IRG4PC30FD?

The maximum collector-to-emitter voltage (VCES) for the IRG4PC30FD is 600V.

What is the continuous collector current at 25°C?

The continuous collector current (IC) at 25°C is 31A.

What type of diode is co-packaged with the IGBT?

It is co-packaged with an ultrafast, ultra-soft-recovery HEXFRED™ diode.

What is the package type for the IRG4PC30FD?

The IRG4PC30FD is supplied in an industry standard TO-247AC package.

What is the typical junction-to-case thermal resistance for the IGBT portion?

The typical junction-to-case thermal resistance for the IGBT is 1.2°C/W.

What is the typical total gate charge?

The typical total gate charge (Qg) is 51nC.

Home

Categories