| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,480 pcs
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1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
715 pcs
|
715 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRG4IBC30SPBF is a Generation 4 N-channel Insulated Gate Bipolar Transistor (IGBT) designed for optimized performance and efficiency. It features a high collector-emitter breakdown voltage of 600V and a continuous collector current of 23.5A at 25°C, reducing to 13.0A at 100°C.
This IGBT offers a typical VCE(on) of 1.4V at 15V VGE and 18A IC, with low switching losses. The device is housed in an industry-standard TO-220 Full-Pak package, making it a suitable drop-in replacement for equivalent Generation 3 IR IGBTs. Its operating junction and storage temperature range is -55°C to +150°C.
The Generation 4 design provides tighter parameter distribution and higher efficiency compared to previous generations. It is optimized for minimum saturation voltage and low operating frequencies below 1 kHz. The lead-free construction aligns with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCES) is 600V.
The continuous collector current is 23.5A at 25°C and 13.0A at 100°C.
The typical collector-to-emitter saturation voltage (VCE(ON)) is 1.4V at 18A and 15V VGE.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in the industry-standard TO-220 Full-Pak package.
Yes, the RoHS status is Compliant.
The Moisture Sensitivity Level (MSL) is 1.