| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRG4BH20K-SPBF is a Short Circuit Rated UltraFast IGBT from Infineon Technologies. It features a collector-to-emitter breakdown voltage of 1200 V and can handle up to 11 A continuous collector current at 25°C (5.0 A at 100°C) with a pulsed current capability of 22 A. The device is short circuit rated with a withstand time of 10 µs at 720 V and 125°C, making it suitable for robust motor control applications.
The IGBT offers low conduction losses with a typical collector-to-emitter saturation voltage of 3.17 V at 15 V gate voltage and 5 A. Switching characteristics include turn-on delay of 23 ns, rise time of 26 ns, turn-off delay of 93 ns, and fall time of 270 ns, with switching energies of 450 µJ (on) and 440 µJ (off) under standard test conditions.
The device is housed in a D2PAK (TO-263) surface mount package with a weight of 6 g. It has a wide operating junction temperature range from -55°C to 150°C. Thermal resistance is 2.1°C/W junction-to-case and 40°C/W junction-to-ambient. This IGBT is lead-free. It is designed for applications such as motor drives, inverters, and power supplies where high efficiency and reliability are required.
1200 V.
D2PAK (TO-2633) surface mount package.
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified from input data).
11 A at 25°C, 5.0 A at 100°C.
10 µs at 720V, 125°C, VGE=15V.
450 µJ (on) and 440 µJ (off) at 960V, 5A, 50Ohm, 15V.