| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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492 pcs
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492 pcs | On Request | 1 | On Request | On Request | 1123 | On Request | On Request |
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The IRFZ48VPBF is an N-Channel power MOSFET from Infineon Technologies (formerly International Rectifier) featuring HEXFET technology. It offers a drain-source voltage of 60V and a continuous drain current of 72A at 25°C. The device has an ultra-low on-resistance of 12mOhm typical at Vgs=10V, reducing conduction losses. The gate charge is 110nC, enabling fast switching. It is fully avalanche rated and designed for switch-mode power supply applications. The TO-220-3 package allows through-hole mounting with a maximum power dissipation of 150W. The operating temperature range is -55°C to 175°C. The device is lead-free and RoHS compliant.
The drain-source voltage (Vdss) is 60V.
72A at Tc=25°C with Vgs=10V, and 51A at Tc=100°C.
Maximum on-resistance is 12mOhm at Id=43A and Vgs=10V.
TO-220-3 (through-hole, TO-220AB).
-55°C to 175°C (junction temperature).
The datasheet indicates lead-free, and the part is listed as RoHS3 compliant with low confidence. Verification is recommended.
Total gate charge is 110nC at Vgs=10V.