| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,770 pcs
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2770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
142 pcs
|
142 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFZ48NPBF is an N-channel HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers a Drain-to-Source Breakdown Voltage of 55V and a continuous Drain Current of 64A at 25°C case temperature with a 10V Gate-to-Source voltage.
Key electrical characteristics include an On-Resistance of 14mΩ (typical) and a Power Dissipation of 130W at 25°C. The operating junction temperature ranges from -55°C to +175°C.
Packaged in the universally preferred TO-220AB through-hole package, this MOSFET is suitable for commercial-industrial applications. Its low thermal resistance and cost-effectiveness contribute to its wide acceptance in various designs.
The device is designed for fast switching speeds and is fully avalanche rated, making it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.80 | $1.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 55V.
The maximum continuous drain current is 64A at a case temperature of 25°C with Vgs at 10V.
The typical on-resistance is 14mΩ.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFZ48NPBF is available in a TO-220AB package.
The maximum power dissipation is 130W at a case temperature of 25°C.