| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ46ZSTRLPBF is a 55V N-Channel Power MOSFET from Infineon Technologies, utilizing advanced HEXFET technology for ultra-low on-resistance and fast switching. This device is rated for a continuous drain current of 51A at 25°C and a maximum drain-source voltage of 55V. The typical on-resistance (Rds(on)) is 13.6mOhm at Vgs=10V, with a gate charge of 46nC and input capacitance of 1460pF.
Designed for high-efficiency power conversion, the MOSFET supports repetitive avalanche up to the maximum junction temperature of 175°C. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 82W at 25°C case temperature.
Packaged in a D2PAK (TO-263) surface-mount package, the device is suitable for automated assembly. The part is RoHS3 compliant and has a moisture sensitivity level (MSL) of 1, indicating unlimited floor life. It is lead-free and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 3,200+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 55V.
The continuous drain current is 51A at Tc=25°C with Vgs=10V.
The maximum Rds(on) is 13.6mOhm at Id=31A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.
It is available in a D2PAK (TO-263-3) surface mount package.
The part is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 4V at Id=250µA.