| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The IRFZ46NSTRLPBF is an N-channel enhancement-mode power MOSFET from Infineon Technologies, part of the renowned HEXFET family. It offers a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 53 A at 25°C case temperature with 10V gate drive. The device features a maximum on-resistance of 16.5 mΩ at Id = 28A and Vgs = 10V, ensuring low conduction losses.
Designed for fast switching applications, this MOSFET has a total gate charge of 72 nC at 10V and an input capacitance of 1696 pF at Vds = 25V. The gate threshold voltage is 4V maximum at Id = 250µA, and the gate-to-source voltage range is ±20V. The device can dissipate up to 107W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.
The part is supplied in a D2PAK (TO-263-3) surface mount package, suitable for high-current designs. The technology is metal-oxide semiconductor (MOSFET) and the device is lead-free as per the datasheet. Datasheet also notes full avalanche rating and fast switching capability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.33 | $2.33 |
| 800+ | $0.77 | $0.77 |
| 1,600+ | $0.71 | $0.71 |
| 2,400+ | $0.68 | $0.68 |
| 4,000+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55 V
53 A at Tc = 25°C with Vgs = 10V
-55°C to 175°C (junction temperature)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (also known as D2PAK)
Yes, the datasheet explicitly states Lead-Free.
16.5 mΩ at Id = 28A and Vgs = 10V
4 V maximum at Vds = Vgs and Id = 250 µA