| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,370 pcs
|
4370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It features a drain-source breakdown voltage of 55V and a continuous drain current of 51A at 25°C case temperature.
The device offers ultra-low on-resistance of 13.9mOhm maximum at 10V gate drive, enabling high efficiency in power conversion applications. It has a total gate charge of 43nC maximum and input capacitance of 1420pF, contributing to fast switching performance.
The MOSFET is housed in a TO-220AB through-hole package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 80W at 25°C case temperature.
This component is lead-free and RoHS compliant, making it suitable for environmentally conscious designs. It is ideal for applications such as DC-DC converters, motor control, and power management.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
51A at 25°C case temperature.
13.9mOhm maximum at 31A and 10V gate drive.
-55°C to 175°C.
TO-220-3 (TO-220AB).
Yes, it is RoHS3 compliant (unverified).
2V to 4V at 250µA drain current.