| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFZ44EPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It uses advanced process technology to achieve a drain-source breakdown voltage of 60V and a continuous drain current of 48A at 25°C case temperature. Maximum on-resistance is 23mΩ at VGS=10V and ID=29A, helping minimize conduction losses in power circuits.
The device supports fast switching with typical rise and fall times of 60ns and 70ns, and is fully avalanche rated with a single-pulse avalanche energy of 220mJ. It includes a dynamic dv/dt rating of 5.0V/ns, and operates over a junction temperature range of -55°C to 175°C. Thermal resistance from junction-to-case is 1.4°C/W, supporting reliable operation in demanding environments.
The IRFZ44EPBF is supplied in a TO-220-3 through-hole package (TO-220AB), which is widely used for commercial and industrial power applications up to approximately 50W dissipation. The part carries the PbF suffix, indicating lead-free construction.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 60V.
The IRFZ44EPBF comes in a TO-220-3 through-hole package (TO-220AB).
The junction temperature range is -55°C to +175°C.
It is listed as RoHS3 compliant in the product database and carries a lead-free (PbF) suffix; however, compliance status is not independently verified.
The continuous drain current is 48A at TC=25°C and 34A at TC=100°C.
Maximum drain-to-source on-resistance is 23mΩ at VGS=10V and ID=29A.
Total gate charge is 60nC at VGS=10V.