| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,220 pcs
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1220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFZ34PBF is an N-Channel power MOSFET from Vishay Siliconix, designed for high-efficiency switching applications. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current of 30A at 25°C case temperature, with a pulsed current capability of 120A. The device features a low maximum on-resistance of 50mΩ at Vgs=10V and Id=18A, minimizing conduction losses. Gate threshold voltage ranges from 2V to 4V at 250µA, and total gate charge is 46nC at Vgs=10V, enabling fast switching. Input capacitance is 1200pF at Vds=25V. The MOSFET is capable of handling single pulse avalanche energy up to 200mJ and peak diode recovery dV/dt of 4.5V/ns, ensuring ruggedness in inductive switching environments. Housed in a through-hole TO-220-3 package (TO-220AB), it is suitable for commercial-industrial applications with power dissipation up to 88W. Operating junction temperature range is -55°C to 175°C, with junction-to-case thermal resistance of 1.7°C/W. The device is marked as RoHS3 compliant and REACH unaffected, though compliance status is unverified.
The drain-source voltage (Vdss) is 60V.
30A at Tc=25°C and 21A at Tc=100°C.
Maximum on-resistance is 50mΩ at Vgs=10V and Id=18A.
Junction temperature range is -55°C to 175°C.
It is available in a through-hole TO-220-3 package (TO-220AB).
It is marked as RoHS3 compliant, but this status is unverified.
Gate threshold voltage ranges from 2V to 4V at Id=250µA.