IRFZ34NS The IRFZ34NS is an N-Channel MOSFET from International Rectifier (Infineon Technologies) designed for power switching applications. It offers a 55V drain-source voltage and 29A continuous drain current.
Mfr Part #:

IRFZ34NS

Available from 1 distributors
Mfr Name: Fremont Micro Devices Ltd
Fremont Micro Devices Ltd
The IRFZ34NS is an N-Channel MOSFET from International Rectifier (Infineon Technologies) designed for power switching applications. It offers a 55V drain-source voltage and 29A continuous drain current.
Total Stock: 639 pcs
$ Price Range: $0.45

IRFZ34NS Available from 1 distributor

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Non-Authorised
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IRFZ34NS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRFZ34NS Description

Short technical summary and product information.

The IRFZ34NS is an N-Channel MOSFET manufactured by International Rectifier (Infineon Technologies), part of the HEXFET® series. This component is designed for various electronic applications requiring efficient power switching.

 

Key electrical characteristics include a maximum drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 29A at 25°C. The on-resistance (Rds On) is a maximum of 40 mOhm at 16A and 10V gate-source voltage, indicating low conduction losses. The gate charge (Qg) is 34nC maximum at 10V, and the input capacitance (Ciss) is 700pF maximum at 25V.

 

The MOSFET operates within a temperature range of -55°C to 175°C (TJ). It features a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA. The power dissipation is rated at 3.8W at ambient temperature (Ta) and 68W at case temperature (Tc).

 

This device is supplied in a D2PAK surface mount package (TO-263-3, D²Pak (2 Leads + Tab), TO-263AB). The mounting type is surface mount, making it suitable for automated assembly processes. The technology used is MOSFET (Metal Oxide).

IRFZ34NS Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: IRFZ34NS N-Channel MOSFET
Subcategory: N-Channel

IRFZ34NS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFZ34NS Estimated Pricing

Qty Low High
1+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFZ34NS Features

  • N-Channel MOSFET technology
  • 55V drain-to-source voltage
  • 29A continuous drain current
  • Low 40 mOhm on-resistance
  • Surface mount D2PAK package

IRFZ34NS Applications

  • Suitable for power switching applications
  • Used in motor control circuits
  • Ideal for power supply regulation
  • Applicable in automotive power modules

IRFZ34NS FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IRFZ34NS?

The maximum drain-to-source voltage (Vdss) for the IRFZ34NS is 55V.

What is the continuous drain current of the IRFZ34NS at 25°C?

The continuous drain current (Id) for the IRFZ34NS at 25°C is 29A.

What is the maximum on-resistance for the IRFZ34NS?

The maximum on-resistance (Rds On) for the IRFZ34NS is 40 mOhm at 16A and 10V.

What is the operating temperature range of the IRFZ34NS?

The operating temperature range for the IRFZ34NS is -55°C to 175°C (TJ).

What package type is the IRFZ34NS supplied in?

The IRFZ34NS is supplied in a D2PAK package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

How is the IRFZ34NS mounted?

The IRFZ34NS is designed for surface mounting.

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