Mfr Part #:

IRFZ34NPBF

Mfr Name: Infineon

The Infineon IRFZ34NPBF is an N-channel HEXFET Power MOSFET designed for efficient power switching applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 29A.

✓ Total Stock: 1,292 pcs

$ Price Range: $1.30

IRFZ34NPBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,285 pcs On Request	1285 pcs	On Request	1	On Request	On Request	2020+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	7 pcs On Request	7 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFZ34NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Lead Spacing	2.54 mm
Lead Style	Through Hole
Mounting Type	Through Hole
Power Dissipation	68W
Reverse Recovery Time	57ns

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IRFZ34NPBF Description

Short technical summary and product information.

The Infineon IRFZ34NPBF is a high-performance N-channel HEXFET Power MOSFET. It utilizes advanced process technology to achieve very low on-resistance, rated at 0.040 Ohms at a gate-source voltage of 10V and a drain current of 16A.

This MOSFET features a drain-to-source breakdown voltage of 55V and can handle a continuous drain current of up to 29A at 25°C case temperature. It also offers a pulsed drain current capability of 100A and a continuous source current of 29A. The operating junction and storage temperature range is from -55°C to +175°C.

Packaged in the industry-standard TO-220AB, the IRFZ34NPBF is suitable for through-hole mounting. Its low thermal resistance, including a junction-to-case rating of 2.2 °C/W, makes it efficient for power dissipation up to 68W at 25°C.

Key electrical characteristics include a gate threshold voltage of 2.0V to 4.0V and a fast switching speed, indicated by a peak diode recovery dv/dt of 5.0 V/ns. The device is also designed for ease of paralleling.

IRFZ34NPBF Quick Information

Product Type: N-channel MOSFET

Series: IRFZ34N

Canonical Name: Infineon IRFZ34NPBF N-channel HEXFET Power MOSFET

Subcategory: N-Channel

IRFZ34NPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFZ34NPBF Estimated Pricing

Qty	Low	High
1+	$1.30	$1.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFZ34NPBF Features

55V drain-to-source breakdown voltage.
29A continuous drain current at 25°C.
0.040 Ohm maximum on-resistance.
TO-220AB package for through-hole mounting.
Wide operating temperature range.

IRFZ34NPBF Applications

Efficient power switching applications.
Designed for ease of paralleling.
Suitable for industrial applications.
Fast switching performance.

IRFZ34NPBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum continuous drain current for the IRFZ34NPBF?

The maximum continuous drain current is 29A at a case temperature of 25°C.

What is the drain-to-source breakdown voltage of the IRFZ34NPBF?

The drain-to-source breakdown voltage is 55V.

What is the on-resistance of the IRFZ34NPBF?

The maximum static drain-to-source on-resistance is 0.040 Ohms when VGS is 10V and ID is 16A.

What is the operating temperature range for the IRFZ34NPBF?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the IRFZ34NPBF supplied in?

The IRFZ34NPBF is supplied in a TO-220AB package.

Is the IRFZ34NPBF RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IRFZ34NPBF?

The Moisture Sensitivity Level is 1 Unlimited.