Mfr Part #:

IRFZ34NPBF

IRFZ34NPBF is an N-Channel power MOSFET from Infineon with a 55V drain-source breakdown voltage and 29A continuous drain current. It features a low 40mΩ on-resistance and is housed in a TO-220AB package.

✓ Total Stock: 8 pcs

$ Price Range: $0.42 - $1.30

IRFZ34NPBF Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Tomark Electronics Ltd ✓ Non-Authorised Inventory information	7 pcs On Request	7 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Emiteli ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFZ34NPBF Description

Short technical summary and product information.

The IRFZ34NPBF is an N-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications.

Key electrical specifications include a drain-source breakdown voltage of 55V, continuous drain current of 29A at 25°C, and a maximum on-resistance of 40mΩ at Vgs=10V. The device can handle pulsed drain currents up to 100A and has a maximum power dissipation of 68W at 25°C case temperature.

The MOSFET is housed in a standard TO-220AB through-hole package, suitable for commercial-industrial applications up to approximately 50W dissipation. It supports an operating junction temperature range of -55°C to 175°C.

IRFZ34NPBF Quick Information

Product Type: Power MOSFET

Series: HEXFET

Canonical Name: IRFZ34NPBF N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IRFZ34NPBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL 1 - Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-Free

IRFZ34NPBF Estimated Pricing

Qty	Low	High
1+	$1.30	$1.30
10+	$0.81	$0.81
50+	$0.60	$0.60
100+	$0.54	$0.54
500+	$0.42	$0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRFZ34NPBF Features

N-Channel MOSFET with 55V drain-source breakdown.
Continuous drain current rated at 29A at 25°C.
Low on-resistance of 40mΩ at 10V gate drive.
Fast switching with 7ns typical turn-on delay.
TO-220AB through-hole package for easy mounting.

IRFZ34NPBF Applications

Ideal for DC-DC converter and power supply designs.
Used in motor control and inverter circuits.
Suitable for high-frequency switching applications.

IRFZ34NPBF FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IRFZ34NPBF?

The drain-source breakdown voltage is 55V minimum at Vgs=0V and Id=250µA.

What is the continuous drain current rating of the IRFZ34NPBF?

The continuous drain current is 29A at Tc=25°C and 20A at Tc=100°C, with Vgs=10V.

What is the on-resistance of the IRFZ34NPBF?

The static drain-source on-resistance is 40mΩ maximum at Vgs=10V and Id=16A.

What package does the IRFZ34NPBF come in?

The IRFZ34NPBF is available in a TO-220-3 package (TO-220AB).

What is the operating temperature range for the IRFZ34NPBF?

The operating junction temperature range is -55°C to 175°C.

Is the IRFZ34NPBF RoHS compliant?

The datasheet indicates the part is lead-free, and the existing database lists it as RoHS3 compliant, though this is unverified.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	29 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C
Power Dissipation (Max)	68 W
Rds On (Max) @ Id, Vgs	40 mΩ
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4V @ 250µA